High-power charger

What the charger is doing

These chargers use a high-frequency supply and a three-step profile: constant current, constant voltage, then a smaller constant current. The loads are battery-swap cabinets, pallet trucks, forklifts, lift trucks, sightseeing and golf carts, mobility vehicles, unmanned delivery vehicles, and agricultural, crop-spraying and firefighting drones.

Charger and the power devices

MHCHXM uses a SiC MOSFET and a high-temperature Schottky in this class of charger. The combination is meant to run hot, conduct heat, keep loss down, and hold reliability so the charge cycle stays stable.

SiC MOSFET

What the SiC MOSFET changes in the charger
ResultIn the design
EfficiencyWith the loss pushed down, efficiency can pass 96% at full power.
SizeThe higher frequency can shrink the magnetics by more than 30%.
TemperatureThe device still delivers above 175°C.
VoltageIt supports an 800 V platform and the vehicle packs that use it.
Running costAbout 30% less loss, so the energy bill over the life of the charger is lower.

High-temperature Schottky

A 175°C Schottky is there to hold reverse leakage and carrier mobility as the die heats up, so the part does not fade. The working window is about −40°C to 175°C.

The barrier metal and the passivation are set to ease mechanical stress and thermal runaway when the case is hot. After temperature cycling, the failure rate is lower than a conventional silicon diode, which is what long-running new-energy and industrial equipment needs.

The high-temperature Schottky line is about 30 A to 100 A and 150 V to 300 V.

High-temperature Schottky

High-temperature low-VF Schottky

Typical topology

Typical charger topology

Selection

SiC MOSFET

SiC MOSFET
PartVDS (V)RDS(on) (mΩ)Package
HXMC65N100P3650100TO-247AB
HXMC65N90P165090TO-247AB
HXMC65N70P165070TO-247AB
HXMC65N20P165020TO-247AB
HXMC80N90P180090TO-247AB
HXMC80N70P180070TO-247AB
HXMC80N20P180020TO-247AB

SiC diode

SiC diode
PartVRRM (V)IF (A)VF (V)Package
ECR1065A650101.5TO-220AC
ECR1565A650151.55TO-220AC
ECR2065A650201.5TO-220AC
ECR3065A650301.55TO-220AC
ECR4065A650401.5TO-220AC
ECRP2065A650201.5TO-247AC
ECRP3065A650301.55TO-247AC
ECRP4065A650401.5TO-247AC
ECR2065PT650201.5TO-247AB
ECR3065PT650301.55TO-247AB
ECR4065PT650401.5TO-247AB

High-temperature Schottky

High-temperature Schottky
PartVRRM (V)IF (A)VF (V)PackageType
MBR60H200CT200600.95TO-220ABStandard high-Tj
MBR60H200CD200600.95TO-263-2LStandard high-Tj
MBR60H200PT200600.95TO-247ABStandard high-Tj
MBR80H200PT200800.96TO-247ABStandard high-Tj
MBR100H200PT2001000.9TO-247ABStandard high-Tj
MBR40H250PT250400.9TO-247ABStandard high-Tj
MBR60H250PT250600.95TO-247ABStandard high-Tj
MBR80H250PT250800.95TO-247ABStandard high-Tj
MBR60H300PT300600.95TO-247ABStandard high-Tj
MBR80H300PT300800.98TO-247ABStandard high-Tj
MBR100H300PT3001001TO-247ABStandard high-Tj
EBR30LH150PT150300.9TO-247ABLow-VF high-Tj
EBR40LH150PT150400.92TO-247ABLow-VF high-Tj
EBR30LH200PT200300.93TO-247ABLow-VF high-Tj
EBR40LH200PT200400.92TO-247ABLow-VF high-Tj
EBR40VH200PT200400.91TO-247ABLow-VF high-Tj
EBR60LH200PT200600.98TO-247ABLow-VF high-Tj
EBR30LH300PT300301.1TO-247ABLow-VF high-Tj
EBR40LH300PT300401TO-247ABLow-VF high-Tj
EBR60LH300PT300600.95TO-247ABLow-VF high-Tj

Fast-recovery diode

Fast-recovery diode
PartVRRM (V)IF (A)trr (ns)VF (V)Package
SFP3006A60030501.55TO-247AC
SFP300440030351.5TO-247AB
SFP300660030351.7TO-247AB
SFP600330060501.15TO-247AB
SFP600440060501.4TO-247AB
SFP600660060501.6TO-247AB
SFP30H06A60030402.3TO-247AC

Beyond the parts above, the MHCHXM lineup also includes SiC diodes, SiC MOSFETs, MOSFETs, Schottky diodes, fast-recovery diodes, rectifier diodes and power transistors. The portfolio is refreshed on a regular cadence.

Samples and selection

Request datasheets or catalog samples via the sample / inquiry channel. Browse the product catalog or cross-reference tool.