News

Catalog updates covering TOLL SiC MOSFET and positive-temperature-coefficient FRD devices.

750 V FRD series, 8–75 A, drop-in for 650 V. Low VF, fast trr, low noise for server, base station, PV and motor drive.

Low-trr FRD in ultra-thin TO-263M for high-frequency SMPS, shorter reverse recovery and lower switching loss.

SiC MOSFET and high-Tj Schottky for high-power chargers: high temperature, low loss, CC/CV charging.

Near-zero temperature-coefficient FRD, 650 V / 1200 V, 30–100 A. Stable VF and Irrm for paralleled diodes.

SiC MOSFET for next-generation LED drivers, lower switching loss and higher power density.

3rd-gen SiC MOSFET in TO-252, TO-247, TO-220, TO-263 and TO-220F. Higher blocking voltage and lower loss.

Shielded-gate SGT MOSFET in PDFN. Low Rsp and Qg for fast chargers, motor drives and power management.

1700 V FRD, high Tj and high current, TO-247. For EV chargers, industrial PSU, motors and inverters.

Schottky, FRD, rectifier, MOSFET and SiC lineup update for faster voltage and package selection.